期刊
ADVANCED MATERIALS
卷 20, 期 11, 页码 2217-2224出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200702775
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A polymer semiconductor with ambipolar charge transport properties, BBTDPP1, is presented. Solution-processed ambipolar field-effect transistors based on this material exhibit hole and electron mobilities of 0.1 cm(2) V-1 s(-1) and up to 0.09 cm(2) V-1 s(-1), respectively. Near-infrared light emission from top-gate as well as bottom-gate ambipolar field-effect transistors based on BBTDPP1 is also reported.
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