4.8 Article

π-σ-Phosphonic Acid Organic Monolayer/Sol-Gel Hafnium Oxide Hybrid Dielectrics for Low-Voltage Organic Transistors

期刊

ADVANCED MATERIALS
卷 20, 期 19, 页码 3697-+

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WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200800810

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资金

  1. NSF-STC Program [DMR-0120967]
  2. Boeing-Johnson Foundation

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Anthryl-alkyl-PA (pi-sigma-PA) self-assembled monolayers (SAMs)/hafnium oxide (HfO2) hybrid dielectrics have been integrated into organic thin film transistors (OTFTs) to achieve operating voltages under -1.5V. Using pi-sigma-PA SAMs on sol-gel processed HfO2, pentacene-based OTFTs possess low subthreshold slopes (100 mV dec(-1)), high on-off current ratios (10(5)-10(6)), and hole mobilities as high as 0.22 cm(2) V-(1) s(-1).

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