期刊
ADVANCED MATERIALS
卷 20, 期 19, 页码 3605-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200800601
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- Arrowhead Research Corporation
- Nanoholdings LLC
In contrast to typical metals, carbon nanotubes are shown to form a unique Schottky barrier contact with semiconductors wherein a gate field can modulate not only the band bending in the semiconductor but also the height of the barrier. These phenomena are exploited to enable two new device architectures: a vertical field-effect transistor (figure) and a vertical light-emitting transistor.
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