期刊
ADVANCED MATERIALS
卷 20, 期 20, 页码 3811-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200702788
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资金
- National Nano Device Laboratories [NDL-94S-C142]
- National Science Council [NSC 95-2112-M-007 -048 MY3]
Control of the orientation, diameter, and length of silicon nanowires (SiNWs) is achieved in large-scale single-crystalline SiNW arrays fabricated by a statistical electroless metal deposition technique. Taguchi methods are employed to optimize the diameter control and to understand the influence of all processing factors on the growth. The < 100 > directions are found to be the preferred crystallographic orientation of the growing SiNWs (see figure).
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