期刊
ADVANCED MATERIALS
卷 20, 期 5, 页码 975-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200702688
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Scanning Kelvin probe microscopy demonstrates that water-induced charge trapping at the SiO2 dielectric visualized in real time and space - is responsible for the commonly observed gate-bias-induced threshold-voltage shift in organic field-effect transistors. When a bias is applied to the electrodes, charges are injected onto the SiO2 (see background of the figure). When the contacts are grounded, the charges are released again (foreground picture).
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