High-surface-area mesoporous germanium from oxidative polymerization of the deltahedral [(Ge9]4- cluster:: Electronic structure modulation with donor and acceptor molecules

Materials that exhibit a high ratio of surface-to-bulk atoms are anticipated to have unique optical and electronic properties.([1]) Generally, such materials are semiconductors and have been available as discrete quantum dot systems. Mesoporous semiconductors, however, with extended frameworks and well-defined pore structure, can be expected to achieve similar characteristics and yet possess additional features such as absorption. The coexistence of regular mesoporosity with a narrow energy gap in a host framework is a unique combination not available with nanodots or conventional porous materials. Systems that blend these disparate features can be of considerable scientific interest for applications in photocatalysis, solar energy conversion, environmental remediation, and optoelectronics.([2,3]).