期刊
ADVANCED MATERIALS
卷 20, 期 1, 页码 115-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200701683
关键词
-
A GaN resonant cavity light emitting diode was built on a GaN/AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant cavity. Theoretical calculations showed that this enhancement could increase up to four times for transmission through a semi-transparent metal contact design, and up to eight times for a flip-chip design.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据