期刊
ADVANCED MATERIALS
卷 20, 期 6, 页码 1141-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200702505
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A semiconductor-top and dielectric-bottom bilayer structure is fabricated by surface-induced vertical phase separation of poly (3-hexylthiophene) (P3HT) and poly(methyl methacrylate) (PMMA) blends (see figure). This structure allows to prepare high-performance, low-semiconductor-content, and low-voltage-driven TFTs in a very effective method, in which the dielectric and semiconductor layers are deposited onto a substrate in a one-step process.
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