Versatile use of vertical-phase-separation-induced bilayer structures in organic thin-film transistors

A semiconductor-top and dielectric-bottom bilayer structure is fabricated by surface-induced vertical phase separation of poly (3-hexylthiophene) (P3HT) and poly(methyl methacrylate) (PMMA) blends (see figure). This structure allows to prepare high-performance, low-semiconductor-content, and low-voltage-driven TFTs in a very effective method, in which the dielectric and semiconductor layers are deposited onto a substrate in a one-step process.