期刊
ADVANCED FUNCTIONAL MATERIALS
卷 24, 期 44, 页码 6949-6955出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201401998
关键词
piezoelectric nanogenerators; zinc oxide; native defect control; screening effects; self-compensation
类别
资金
- National Research Foundation of Korea (NRF) - Ministry of Science, ICT AMP
- Future Planning [2012R1A2A1A01002787, 2009-0083540]
- Energy International Collaboration Research AMP
- Development Program of the Korea Institute of Energy Technology Evaluation and Planning - Ministry of Knowledge Economy [2011-8520010050]
- National Research Foundation of Korea [2012R1A2A1A01002787] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Remarkable enhancement of piezoelectric power output from a nanogenerator (NG) based on a zinc oxide (ZnO) thin film is achieved via native defect control. A large number of unintentionally induced point defects that act as n-type carriers in ZnO have a strong influence on screening the piezoelectric potential into a piezoelectric NG. Here, additional oxygen molecules bombarded into ZnO lead to oxygen-rich conditions, and the n-type conductivity of ZnO is decreased dramatically. The acceptor-type point defects such as zinc vacancies created during the deposition process trap n-type carriers occurring from donor-type point defects through a self-compensation mechanism. This unique insulating-type ZnO thin film-based NGs (IZ-NGs) generates output voltage around 1.5 V that is over ten times higher than that of an n-type ZnO thin film-based NG (around 0.1 V). In addition, it is found that the power output performance of the IZ-NG can be further increased by hybridizing with a p-type polymer (poly(3-hexylthiophene-2,5-diyl):phenyl-C-61-butyric acid methyl ester) via surface free carrier neutralization.
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