期刊
ADVANCED FUNCTIONAL MATERIALS
卷 24, 期 43, 页码 6741-6750出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201401278
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资金
- Australian Research Council [DP1301000, DP1092717, DP11010026262]
- [LE0882246]
- [LE0989615]
- [LE110100223]
- Australian Research Council [LE110100223] Funding Source: Australian Research Council
Memristive devices are the precursors to high density nanoscale memories and the building blocks for neuromorphic computing. In this work, a unique room temperature synthesized perovskite oxide (amorphous SrTiO3 : alpha-STO) thin film platform with engineered oxygen deficiencies is shown to realize high performance and scalable metal-oxide-metal (MIM) memristive arrays demonstrating excellent uniformity of the key resistive switching parameters. alpha-STO memristors exhibit nonvolatile bipolar resistive switching with significantly high (10(3)-10(4)) switching ratios, good endurance (>10(6) I-V sweep cycles), and retention with less than 1% change in resistance over repeated 10(5) s long READ cycles. Nano-contact studies utilizing in situ electrical nanoindentation technique reveal nanoionics driven switching processes that rely on isolatedly controllable nano-switches uniformly distributed over the device area. Furthermore, in situ electrical nanoindentation studies on ultrathin alpha-STO/metal stacks highlight the impact of mechanical stress on the modulation of non-linear ionic transport mechanisms in perovskite oxides while confirming the ultimate scalability of these devices. These results highlight the promise of amorphous perovskite memristors for high performance CMOS/CMOL compatible memristive systems.
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