4.8 Article

Nitrogen-Doped Graphitic Nanoribbons: Synthesis, Characterization, and Transport

期刊

ADVANCED FUNCTIONAL MATERIALS
卷 23, 期 30, 页码 3755-3762

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201202947

关键词

carbon; nanoribbons; doping; sensors; transport mechanisms; graphite

资金

  1. JST-Japan
  2. Penn State Center for Nanoscale Science (MRSEC
  3. NSF) [DMR-0820404]
  4. CAPES, Brazil
  5. CONACYT (Mexico) [CB-2008-SEP-107082, 60218-F1, 48300 S-3907]
  6. MURI [ONR-N00014-09-1-1063]
  7. MCINN [FIS2009-12721-C04-01]
  8. AGAUR
  9. CONACYT [223807, 223824]
  10. PSU
  11. Center for Nanophase Materials Sciences (CNMS)
  12. Division of Scientific User Facilities, U.S. Department of Energy
  13. Direct For Mathematical & Physical Scien
  14. Division Of Materials Research [1062691] Funding Source: National Science Foundation

向作者/读者索取更多资源

Nitrogen-doped graphitic nanoribbons (N-x-GNRs), synthesized by chemical vapor deposition (CVD) using pyrazine as a nitrogen precursor, are reported for the first time. Scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) reveal that the synthesized materials are formed by multilayered corrugated GNRs, which in most cases exhibit the formation of curved graphene edges (loops). This suggests that during growth, nitrogen atoms promote loop formation; undoped GNRs do not form loops at their edges. Transport measurements on individual pure GNRs exhibit a linear I-V (current-voltage) behavior, whereas N-x-GNRs show reduced current responses following a semiconducting-like behavior, which becomes more prominent for high nitrogen concentrations. To better understand the experimental findings, electron density of states (DOS), quantum conductance for nitrogen-doped zigzag and armchair single-layer GNRs are calculated for different N doping concentrations using density functional theory (DFT) and non-equilibrium Green functions. These calculations confirm the crucial role of nitrogen atoms in the transport properties, confirming that the nonlinear I-V curves are due to the presence of nitrogen atoms within the N-x-GNRs lattice that act as scattering sites. These characteristic N-x-GNRs transport properties could be advantageous in the fabrication of electronic devices including sensors in which metal-like undoped GNRs are unsuitable.

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