期刊
ADVANCED FUNCTIONAL MATERIALS
卷 23, 期 7, 页码 832-838出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201201693
关键词
electron localization; spin-transport; magnetoresistance; conductivity
类别
资金
- DFG [FOR 1464 ASPIMATT (1.2-A)]
A new scheme dedicated to improving spin-transport characteristics by applying random disorder as a constructive agent is reported. The approach paves the way for the construction of novel systems with a surprising combination of properties, which are either extremely rare or even entirely absent within the known classes of ordered materials: half-metals with no net magnetization and magnetic semiconductors. As a real case example for the applicability of the scheme, it is shown that a series of such materials can be derived from the tetragonal Heusler compound Mn3Ga by substituting Mn with a 3d-transition metal.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据