期刊
ADVANCED FUNCTIONAL MATERIALS
卷 22, 期 4, 页码 709-716出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201102362
关键词
resistive switching; memory devices; oxygen ion movement
类别
资金
- Ministry of Knowledge Economy
- Leading Foreign Research Institute through National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology (MEST) [2011-00125]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10039191] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2009-00454] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Developing a means by which to compete with commonly used Si-based memory devices represents an important challenge for the realization of future three-dimensionally stacked crossbar-array memory devices with multifunctionality. Therefore, oxide-based resistance switching memory (ReRAM), with its associated phenomena of oxygen ion drifts under a bias, is becoming increasingly important for use in nanoscalable crossbar arrays with an ideal memory cell size due to its simple metalinsulatormetal structure and low switching current of 10100 mu A. However, in a crossbar array geometry, one single memory element defined by the cross-point of word and bit lines is highly susceptible to unintended leakage current due to parasitic paths around neighboring cells when no selective devices such as diodes or transistors are used. Therefore, the effective complementary resistive switching (CRS) features in all Ti-oxide-based triple layered homo Pt/TiOx/TiOy/TiOx/Pt and hetero Pt/TiOx/TiON/TiOx/Pt geometries as alternative resistive switching matrices are reported. The possible resistive switching nature of the novel triple matrices is also discussed together with their electrical and structural properties. The ability to eliminate both an external resistor for efficient CRS operation and a metallic Pt middle electrode for further cost-effective scalability will accelerate progress toward the realization of cross-bar ReRAM in this framework.
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