期刊
ADVANCED FUNCTIONAL MATERIALS
卷 21, 期 15, 页码 2854-2860出版社
WILEY-BLACKWELL
DOI: 10.1002/adfm.201100474
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资金
- Ministry of Education, Culture, Sports, Science and Technology, Japan [22350082, 20655041]
- Sumitomo Foundation
- Grants-in-Aid for Scientific Research [22350082, 20655041, 23550208] Funding Source: KAKEN
A novel device structure for organic light-emitting field-effect transistors has been developed. The devices comprise bilayer-crystal organic semiconductors of a p-type and an n-type. The pn-junction can readily be formed by successively laminating two crystals on top of a gate insulator. This structure enables the efficient injection and transport of electrons and holes, leading to their effective recombination. As a result, bright emissions are attained. The devices are operated by AC gate voltages. Gate-voltage phase-resolved drain-current and emission-intensity measurements enable us to study the relationship between the emissions and carrier transport. The maximum external quantum efficiency reaches 0.045%.
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