期刊
ADVANCED FUNCTIONAL MATERIALS
卷 22, 期 1, 页码 192-199出版社
WILEY-BLACKWELL
DOI: 10.1002/adfm.201101521
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资金
- Shanghai Key Program [1052nm07600]
- Shanghai Institutions of Higher Learning
- Converging Research Center Program [2010K000977]
- World Class University through National Research Foundation of Korea [R31-2008-000-10075-0]
- Ministry of Education, Science and Technology
- National Research Foundation of Korea [R31-2012-000-10075-0, 2010-50170] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
After calculations of various domain-switching current transients under the pulse from electrical circuit parameters, the field dependence of domain-switching speeds is accurately estimated over five orders of magnitude in a wide temperature range of 5.4-280 K from the height of domain-switching current in Pb(Zr0.4Ti0.6)O-3 thin films. These estimations are extended following Merz's equation [W. J. Merz, Phys. Rev. 1954, 95, 690] and an ultimate domain-switching current density of 1.4 x 10(8) A cm(-1) is extracted at the highest field of 0.20 MV cm(-1). From classical domain-nucleation models with thermal fluctuations, an ultimate (asymptotic high-field) nucleation time of 0.47 ps is derived when the domain sideways motion is kink-nucleation-rate limited.
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