相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Anomalous Schottky Barriers and Contact Band-to-Band Tunneling in Carbon Nanotube Transistors
David J. Perello et al.
ACS NANO (2010)
Growth and Performance of Yttrium Oxide as an Ideal High-kappa Gate Dielectric for Carbon-Based Electronics
Zhenxing Wang et al.
NANO LETTERS (2010)
Almost Perfectly Symmetric SWCNT-Based CMOS Devices and Scaling
Zhiyong Zhang et al.
ACS NANO (2009)
The Effects of Substrate Phonon Mode Scattering on Transport in Carbon Nanotubes
Vasili Perebeinos et al.
NANO LETTERS (2009)
Y-Contacted High-Performance n-Type Single-Walled Carbon Nanotube Field-Effect Transistors: Scaling and Comparison with Sc-Contacted Devices
Li Ding et al.
NANO LETTERS (2009)
Fabrication of Ultralong and Electrically Uniform Single-Walled Carbon Nanotubes on Clean Substrates
Xueshen Wang et al.
NANO LETTERS (2009)
High-performance n-type carbon nanotube field-effect transistors with estimated sub-10-ps gate delay
Z. Y. Zhang et al.
APPLIED PHYSICS LETTERS (2008)
Self-Aligned Ballistic n-Type Single-Walled Carbon Nanotube Field-Effect Transistors with Adjustable Threshold Voltage
Zhiyong Zhang et al.
NANO LETTERS (2008)
Doping-free fabrication of carbon nanotube based ballistic CMOS devices and circuits
Zhiyong Zhang et al.
NANO LETTERS (2007)
Carbon-based electronics
Phaedon Avouris et al.
NATURE NANOTECHNOLOGY (2007)
Scaling of resistance and electron mean free path of single-walled carbon nanotubes
Meninder S. Purewal et al.
PHYSICAL REVIEW LETTERS (2007)
Copper catalyzing growth of single-walled carbon nanotubes on substrates
Weiwei Zhou et al.
NANO LETTERS (2006)
Band structure, phonon scattering, and the performance limit of single-walled carbon nanotube transistors
XJ Zhou et al.
PHYSICAL REVIEW LETTERS (2005)
On the potential of SiGeHBTs for extreme environment electronics
JD Cressler
PROCEEDINGS OF THE IEEE (2005)
The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors
ZH Chen et al.
NANO LETTERS (2005)
High-field quasiballistic transport in short carbon nanotubes
A Javey et al.
PHYSICAL REVIEW LETTERS (2004)
Electron-phonon scattering in metallic single-walled carbon nanotubes
JY Park et al.
NANO LETTERS (2004)
Carbon nanotube field-effect transistors with integrated ohmic contacts and high-k gate dielectrics
A Javey et al.
NANO LETTERS (2004)
A numerical study of scaling issues for Schottky-Barrier carbon nanotube transistors
J Guo et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2004)
Tunneling versus thermionic emission in one-dimensional semiconductors
J Appenzeller et al.
PHYSICAL REVIEW LETTERS (2004)
Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays
A Javey et al.
NANO LETTERS (2004)
Scaling of excitons in carbon nanotubes
V Perebeinos et al.
PHYSICAL REVIEW LETTERS (2004)
Extraordinary mobility in semiconducting carbon nanotubes
T Durkop et al.
NANO LETTERS (2004)
Ballistic carbon nanotube field-effect transistors
A Javey et al.
NATURE (2003)
Carbon nanotubes as Schottky barrier transistors
S Heinze et al.
PHYSICAL REVIEW LETTERS (2002)
High-temperature electronics - A role for wide bandgap semiconductors?
PG Neudeck et al.
PROCEEDINGS OF THE IEEE (2002)
Role of Fermi-level pinning in nanotube Schottky diodes
F Léonard et al.
PHYSICAL REVIEW LETTERS (2000)