4.8 Article

An Electrically Tuned Solid-State Thermal Memory Based on Metal-Insulator Transition of Single-Crystalline VO2 Nanobeams

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ADVANCED FUNCTIONAL MATERIALS
卷 21, 期 9, 页码 1602-1607

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WILEY-BLACKWELL
DOI: 10.1002/adfm.201002436

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  1. National University of Singapore [R-144-000-222-646, R-263-000-494-646]

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A solid-state thermal memory that can store and retain thermal information with temperature states as input and output is demonstrated experimentally. A single-crystal VO2 nanobeam is used, undergoing a metal-insulator transition at similar to 340 K, to obtain a nonlinear and hysteresis response in temperature. It is shown that the application of a voltage bias can substantially tune the characteristics of the thermal memory, to an extent that the heat conduction can be increased similar to 60%, and the output HIGH/LOW temperature difference can be amplified over two orders of magnitude compared to an unbiased device. The realization of a solid-state thermal memory combined with an effective electrical control thus allows the development of practical thermal devices for nano-to macroscale thermal management.

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