期刊
ADVANCED FUNCTIONAL MATERIALS
卷 19, 期 17, 页码 2812-2818出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.200900589
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资金
- Korea Ministry of Knowledge and Economy, Samsung Electronics Co., Ltd.
- NSF [DMR-0804449]
- POSCO, Korea
- Brain Korea 21 Project
- Seoul Science Fellowship
- Korea government (MEST) [R11-2007-050-03001-0]
- National Research Foundation of Korea [2007-0056565, R11-2007-050-03001-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Here, a facile route to fabricate thin ferroelectric poly(vinylidene fluoride) (PVDF)/poly(methylmethacrylate) (PMMA) blend films with very low surface roughness based on spin-coating and subsequent melt-quenching is described. Amorphous PMMA in a blend film effectively retards the rapid crystallization of PVDF upon quenching, giving rise to a thin and flat ferroelectric film with nanometer scale beta-type PVDF crystals. The still, flat interfaces of the blend film with metal electrode and/or an organic semi-conducting channel layer enable fabrication of a highly reliable ferroelectric capacitor and transistor memory unit operating at voltages as low as 15 V. For instance, with a TIPS-pentacene single crystal as an active semi-conducting layer, a flexible ferroelectric field effect transistor shows a clockwise I-V hysteresis with a drain current bistability of 10(3) and data retention time of more than 15 h at +/- 15 V gate voltage. Furthermore, the robust interfacial homogeneity of the ferroelectric film is highly beneficial for transfer printing in which arrays of metal/ferroelectric/metal micro-capacitors are developed over a large area with well defined edge sharpness.
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