期刊
ADVANCED FUNCTIONAL MATERIALS
卷 19, 期 3, 页码 420-427出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.200801319
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资金
- Korea Science and Engineering Foundation (KOSEF)
- Ministry of Education, Science and Technology of Korea
- National Research Foundation of Korea [과09A1113, 과C6A1903] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A novel host material containing silicon-cored spirobifluorene derivative (SBP-TS-PSB), is designed, synthesized, and characterized for red phosphorescent organic light-emitting diodes (OLEDs). The SBP-TS-PSB has excellent thermal and morphological stabilities and exhibits high electroluminescence (EL) efficiency as a host for the red phosphorescent OLEDs. The electrophosphorescence properties of the devices using SBP-TS-PSB as the host and red phosphorescent iridium (III) complexes as the emitter are investigated and these devices exhibit higher EL performances compared with the reference devices with 4,4'-N,N'-dicarbazole-biphenyl (CBP) as a host material; for example, a (piq)(2)Ir(acac)-doped SBP-TS-PSB device shows maximum external quantum efficiency of eta(ext) = 14.6%, power efficiency of 10.3 Im W-1 and Commission International de L'Eclairage color coordinates (0.68, 0.32) at J = 1.5 mA cm(-2), while the device with the CBP host shows maximum eta(ext) = 12.1%. These high performances can be mainly explained by efficient triplet energy transfer from the host to the guests and improved charge balance attributable to the bipolar characteristics of the spirobifluorene group.
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