期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 28, 期 3, 页码 -出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.3305340
关键词
atomic force microscopy; electronic density of states; elemental semiconductors; germanium; scanning tunnelling microscopy; tunnelling
资金
- Ministry of Education, Culture, Sports, Science, and Technology of Japan (MEXT) [19053006, 17101003, 21246010, 21656013, 20760024]
- Japan Science and Technology Agency (JST)
- Handai Frontier Research Center
- Global Center of Excellence programs
- Grants-in-Aid for Scientific Research [20760024, 21656013, 21246010] Funding Source: KAKEN
In this article, the authors present the simultaneous noncontact atomic force microscopy and scanning tunneling microscopy measurement of the Ge(111)-c(2x8) surface using PtIr-coated Si cantilevers at room temperature. In both frequency shift and time-averaged tunneling current images at constant-height mode, each atom was clearly resolved. The image contrasts differ because the time-averaged tunneling current image is more directly coupled with local density of states than the frequency shift image. They demonstrate the measurement of the site-specific scanning tunneling spectroscopy (STS) spectra, which are in good agreement with typical STS measurements. Moreover, they demonstrate the simultaneous measurements of site-specific frequency shift and tunneling current as a function of tip-sample distance curves. On the Ge(111)-c(2x8) surface, tunneling current dropped at the near-contact region where a strong tip-sample interaction force is observed.(C) 2010 American Vacuum Society. [DOI: 10.1116/1.3305340]
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