Growth, characterization, and uniformity analysis of 200 mm wafer-scale SrTiO3/Si

SrTiO3/Si wafers with high crystalline quality and smooth surface morphology are highly desirable for developing novel devices such as next generation dynamic random access memory and oxide field effect devices. Very high quality STO/Si epiwafers with diameter of up to 200 mm have been prepared on a production molecular beam epitaxy platform. Reflection high-energy electron diffraction was used to ensure the excellent stoichiometric control, which has been confirmed by a wide range of characterization techniques including x-ray diffraction, atomic force microscopy, cross-sectional transmission electron microscopy, and Rutherford backscattering spectroscopy. The uniformity of the large scale SrTiO3/Si wafers has been investigated using multipoint characterization techniques, which reveal excellent material properties and uniformities.