期刊
ACTA PHYSICA POLONICA A
卷 121, 期 1, 页码 217-220出版社
POLISH ACAD SCIENCES INST PHYSICS
DOI: 10.12693/APhysPolA.121.217
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Indium-doped ZnO thin films were deposited by sol-gel spin-coating method with various In content. The effects of In content on the structural and optical properties of the indium-doped ZnO thin films were investigated by scanning electron microscopy, X-ray diffraction, and UV-visible spectroscopy. The particle-like surface morphology and the crystallinity of the indium-doped ZnO thin films were affected by change in the In content, especially at the In content of 3 at.%. The values of direct band gap were decreased with increase in the In content. The width of localized states in the optical band gap of the indium-doped ZnO thin films were changed with In content and the Urbach energy (E-U) was changed inversely with optical band gap of the indium-doped ZnO thin films.
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