期刊
INORGANIC CHEMISTRY
卷 54, 期 24, 页码 11826-11830出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.inorgchem.5b01976
关键词
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资金
- Natural Science Foundation of China [21271055, 21471040]
- Fundamental Research Funds for the Central Universities [HIT. IBRSEM. A. 201410]
- Open Project of State Key Laboratory of Urban Water Resource and Environment, Harbin Institute of Technology [QAK201304]
- Program for Innovation Research of Science in Harbin Institute of Technology (PIRS) [HIT B201412]
- Foundation Research Project of Jiangsu Province (The Natural Science Fund) [BK20150536]
Wide-light absorption is important to semiconductors exploited in many applications such as photocatalysts, photovoltaic devices, and light-emitting diodes, which can effectively improve solar energy utilization. Especially for photocatalysts, the development and design of new semiconductors that harvest the whole-visible-light region (lambda = 400-800 nm) is rarely reported, which is still a tremendous challenge up to now. Here we realize whole-visible-light absorption up to 900 nm for a semiconductor by means of construction of a mixed-valence Ag0.68V2O5, which results from an assistant effect of d-d transition. Ag0.68V2O5 serving as a photocatalyst obviously exhibits photo-electrochemical and photocatalytic properties. Our results provide a brand-new feasible design strategy to broaden the light absorption of semiconductors and highlight a route to further make the best use of the full solar spectrum.
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