4.1 Article Proceedings Paper

Ferromagnetic Transition in Ge1-xMnxTe Layers

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ACTA PHYSICA POLONICA A
卷 116, 期 5, 页码 904-906

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POLISH ACAD SCIENCES INST PHYSICS
DOI: 10.12693/APhysPolA.116.904

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Ferromagnetic transition temperature in thin layers of diluted magnetic (semimagnetic) semiconductor Ge1-xMnxTe was studied experimentally by SQUID magnetometry method and analyzed theoretically for a model Ising-type diluted magnetic. system with Ruderman-Kittel-Kasuya-Yosida indirect exchange interaction. The key features of the experimentally observed dependence of the Curie temperature on Mn content (x <= 0 12) and conducting hole concentration p = (1-10) x 10(21) cm(-3) were reproduced theoretically for realistic valence band and crystal lattice parameters of p-Ge1-xMnxTe taking into account short carrier mean free path encountered in this material and Ruderman-Kittel-Kasuva-Yosida mechanism with both delta-like and diffused character of spatial dependence of the exchange coupling between magnetic ions and free carriers.

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