期刊
JOURNAL OF SEMICONDUCTORS
卷 31, 期 10, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1674-4926/31/10/103001
关键词
transparent conductive film; deep ultraviolet; gallium oxide; indium tin oxide
资金
- National Natural Science Foundation of China [10974077]
- Shandong Province Natural Science Foundation of China [ZR2009GM035]
- Shandong Province Higher Educational Science and Technology Program [J10LA08]
Ga2O3/ITO films were prepared by magnetron sputtering on quartz glass substrates. The transmittance and sheet resistance of ITO films and Ga2O3/ITO films were measured by using a double beam spectrophotometer and four point probes. The effect of the ITO layer and Ga2O3 layer thickness on the electrical and optical properties of Ga2O3/ITO bi-layer films were investigated in detail. Ga2O3 (50 nm)/ITO (23 nm) films exhibited a low sheet resistance of 323 Omega/square and high deep ultraviolet transmittance of 77.6% at a wavelength of 280 nm. The ITO layer controls the ultraviolet transmittance and sheet resistance of Ga2O3/ITO films. The Ga2O3 layer thickness has a marked effect on the transmission spectral shape of Ga2O3/ITO films in the violet spectral region.
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