期刊
ACTA MATERIALIA
卷 74, 期 -, 页码 49-57出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2014.03.069
关键词
Phase-change material; W-Ge-Te; Homogeneous phase; Operation speed; Thermal stability
资金
- Strategic Priority Research Program of Chinese Academy of Sciences [XDA09020402]
- National Key Basic Research Program of China [2013CBA01902, 2011CBA00607, 2011CB932804, 2010CB934300]
- National Integrate Circuit Research Program of China [2009ZX02023-003]
- National Natural Science Foundation of China [61076121, 61176122, 61106001, 61261160500, 61376006, 11104109, 11374119, 11205140]
- Science and Technology Council of Shanghai [11DZ2261000, 12nm0503701, 12QA1403900, 13ZR1447200, 13DZ2295700]
- Foundation for Development of Science and Technology of China Academy of Engineering Physics [2012B0103005, 2012B0103006]
Homogeneous phase W-Ge-Te material has been proposed and investigated for phase-change memory (PCM) applications. The crystallization temperature of GeTe is markedly improved by introducing W atoms. In the W-Ge-Te material, W atoms bonding to Ge and Te atoms serve as substitutional impurities. During the crystallization process, the diffusion of Ge and Te atoms is restricted by W atoms that have larger atomic mass, which further leads to more uniform crystallization of the material. W atoms serve as nucleation centers and attract the surrounding Ge and Te atoms, quickly building crystal grains. W-0.1(GeTe)(0.9) film has a 10-year data retention temperature of 225 degrees C and an ultrafast crystallization time of 3 ns. Specifically, W-0.1(GeTe)(0.9) film can withstand the Pb-free solder reflow temperature (260 degrees C) for 4.6 x 10(4) s. A voltage pulse of as little of 10 ns long can realize reversible operations for W-0.1(GeTe)(0.9)-based PCM devices. In addition, good endurance (5 x 10(5) cycles) has also been obtained for the cell. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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