期刊
ACTA MATERIALIA
卷 61, 期 3, 页码 945-951出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2012.10.042
关键词
GaN; LEDs; Laser diodes; Solid-state lighting
资金
- NSF MRSEC program [DMR 1121053]
- National Science Foundation (NSF)
Light-emitting diodes (LEDs) fabricated from gallium nitride (GaN) have led to the realization of high-efficiency white solid-state lighting. Currently, GaN white LEDs exhibit luminous efficacy greater than 150 lm W-1, and external quantum efficiencies higher than 60%. This has enabled LEDs to compete with traditional lighting technologies, such as incandescent and compact fluorescent (CFL) lighting. Further improvements in materials quality and cost reduction are necessary for widespread adoption of LEDs for lighting. A review of the unique polarization anisotropy in GaN is included for the different crystal orientations. The emphasis on nonpolar and semipolar LEDs highlights high-power violet and blue emitters, and we consider the effects of indium incorporation and well width. Semipolar GaN materials have enabled the development of high-efficiency LEDs in the blue region and recent achievements of green laser diodes at 520 nm. (C) 2012 Published by Elsevier Ltd. on behalf of Acta Materialia Inc.
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