Interfacial reaction between Sn-Ag-Cu solder and Co-P films with various microstructures

We electroplated Co-P films with nanocrystalline, amorphous and nanocrystalline/amorphous mixed structures and used them as under-bump metallization (UBM) joined with Sn-Ag-Cu lead-free solder. We systematically investigated the interfacial reaction between the Sn-Ag-Cu solder and the Co-P UBM and analyzed the growth mechanisms of the intermetallic compounds formed at the interfaces of the Sn-Ag-Cu/Co-P joints through multiple reflows. Among the three kinds of Co-P films, the film with a mixed structure shows the best diffusion-barrier properties and is a good candidate for the UBM joined with the Sn-Ag-Cu solder. For the nanocrystalline Co-P UBM, Co diffuses quickly toward the solder and Sn does not diffuse into the UBM, whereas for the amorphous Co-P film not only does Co diffuse into the solder, but also Sn diffuses into the Co-P film with a large diffusion rate. In addition, the first-principles calculation shows that the exchange coupling between Co(3d(7)4s(2)) and Sn(5s(2)5p(2)) electrons and between Sn(5s(2)5p(2)) and P(3s(2)3p(3)) electrons results in the formation of CoSn and SnP3, which originate from the diffusion and reaction of Co and Sn atoms, respectively; this is consistent with the experimental data of transmission electron microscopy characterization. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.