期刊
ACTA MATERIALIA
卷 61, 期 14, 页码 5429-5436出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2013.05.031
关键词
Semiconductors; Multi layer thin films; Electrical properties; Growth temperature; Mechanism
资金
- Program for New Century Excellent Talents in University (NCET)
- 863 Program [2007AA03Z423]
- China Postdoctoral Science Foundation
- Natural Science Foundation of China [2012IRTSTHN004]
The effects of an embedded silver layer and substrate temperature on the electrical and optical properties of Sb-doped SnO2 (ATO)/silver (Ag) layered composite structures on polyethylene naphthalate substrates have been investigated. The highest conductivity of ATO/Ag multilayer films was obtained with a carrier concentration of 1.5 x 10(22) cm(-3) and a resistivity of 2.4 x 10(-5) Omega cm at the optimum Ag layer thickness and substrate temperature. The photopic averaged transmittance and Haacke figure of merit are 81.7%, and 21.7 x 10(-3) Omega(-1), respectively. In addition, a conduction mechanism is proposed to elucidate the mobility variation with increased Ag thickness. We also describe the influence of substrate temperature on the structural, electrical and optical properties of the ATO/Ag multilayer films, and propose a mechanism for the changes in electrical and optical properties at different substrate temperatures. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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