期刊
ACTA MATERIALIA
卷 61, 期 12, 页码 4320-4328出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2013.03.037
关键词
Silicon; Nickel; Precipitation; Retrograde melting; Melting
资金
- US Department of Energy [DE-FG36-09GO19001]
- National Science Foundation
- Office of Science, Office of Basic Energy Sciences, of the US Department of Energy [DE-AC02-05CH11231]
- National Science Foundation [ECS-0335765]
High point-defect enthalpy of formation leads to retrograde solubility for a number of solutes in silicon, especially d-shell transition metals. We present direct experimental evidence for a thermodynamic pathway leading to local retrograde melting in silicon driven by the retrograde solubility of low-concentration metallic solutes at temperatures above the bounding liquid-silicide-silicon invariant reaction. We experimentally demonstrate this local melting pathway using in situ synchrotron-based X-ray microprobe measurements of silicon supersaturated with nickel, wherein solute precipitation into liquid droplets is observed. No significant energy barrier is observed for the nucleation of the liquid droplets at the surface, suggesting that in the Ni-Si system, retrograde melting will occur upon supersaturation if favorable heterogeneous nucleation sites are available. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据