4.7 Article

Defect microstructure in heavy-ion-bombarded (0001) ZnO

期刊

ACTA MATERIALIA
卷 60, 期 17, 页码 6086-6090

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2012.07.046

关键词

Intermediate defect peak; ZnO surface; Ion implantation; ZnO; Radiation damage

资金

  1. US DOE by LLNL [DE-AC52-07NA27344]
  2. NSF [0846835]
  3. Div Of Civil, Mechanical, & Manufact Inn
  4. Directorate For Engineering [0846835] Funding Source: National Science Foundation

向作者/读者索取更多资源

Radiation defects in oxides are complex and remain poorly understood. Here, we use transmission electron microscopy to study ZnO crystals bombarded at room temperature with heavy ions (500 keV Xe). Results reveal that the damage evolution proceeds via the formation of a band of cavities centered similar to 7 nm from the sample surface. With further irradiation, a layered structure is formed, with alternating near-stoichiometric and Zn-rich layers. The anomalous intermediate peak and step in ion channeling spectra are attributed to a Zn-rich defect band and an interface between stoichiometric and Zn-rich layers, respectively. To explain these observations, we propose a damage build-up scenario involving vacancy clustering, loss of 0 from the surface, and peculiarities of point-defect transport through a Zn-rich defect band toward the surface. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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