期刊
ACTA MATERIALIA
卷 60, 期 17, 页码 6086-6090出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2012.07.046
关键词
Intermediate defect peak; ZnO surface; Ion implantation; ZnO; Radiation damage
资金
- US DOE by LLNL [DE-AC52-07NA27344]
- NSF [0846835]
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [0846835] Funding Source: National Science Foundation
Radiation defects in oxides are complex and remain poorly understood. Here, we use transmission electron microscopy to study ZnO crystals bombarded at room temperature with heavy ions (500 keV Xe). Results reveal that the damage evolution proceeds via the formation of a band of cavities centered similar to 7 nm from the sample surface. With further irradiation, a layered structure is formed, with alternating near-stoichiometric and Zn-rich layers. The anomalous intermediate peak and step in ion channeling spectra are attributed to a Zn-rich defect band and an interface between stoichiometric and Zn-rich layers, respectively. To explain these observations, we propose a damage build-up scenario involving vacancy clustering, loss of 0 from the surface, and peculiarities of point-defect transport through a Zn-rich defect band toward the surface. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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