Influence of hydrogen on the properties of Al and Ga-doped ZnO films at room temperature

Low resistivity and high transmittance of Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) transparent conductive thin films have been achieved by use of pulsed dc magnetron sputtering in a hydrogen environment at room temperature. The addition of hydrogen to the sputtering gas can reduce the resistivity of the films and improve their electrical properties compared to those prepared without H-2, because the hydrogen acts a shallow donor. The average transmittance was over 85% in the visible region, and the lowest resistivity of the AZO and GZO films was 4.01 x 10(-4) (Omega-cm) and 4.39 x 10(-4) (Omega-cm), respectively. (C) 2010 Optical Society of America