期刊
APPLIED OPTICS
卷 50, 期 9, 页码 C197-C200出版社
OPTICAL SOC AMER
DOI: 10.1364/AO.50.00C197
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- National Science Council of Taiwan (NSCT) [NSC 96-2221-E-008-065-MY3]
Low resistivity and high transmittance of Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) transparent conductive thin films have been achieved by use of pulsed dc magnetron sputtering in a hydrogen environment at room temperature. The addition of hydrogen to the sputtering gas can reduce the resistivity of the films and improve their electrical properties compared to those prepared without H-2, because the hydrogen acts a shallow donor. The average transmittance was over 85% in the visible region, and the lowest resistivity of the AZO and GZO films was 4.01 x 10(-4) (Omega-cm) and 4.39 x 10(-4) (Omega-cm), respectively. (C) 2010 Optical Society of America
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