期刊
ACS NANO
卷 12, 期 8, 页码 8808-8816出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.8b05172
关键词
perovskite nanocrystals; quantum dots; in situ fabrication; photoluminescence; light-emitting diode
类别
资金
- National Natural Science Foundation of China [61722502, 21603012, 61735004]
- BOE Technology Group Co., Ltd., China
In this paper, we reported the in situ fabrication of highly luminescent formamidinium lead bromide (FAPbBr(3)) nanocrystal thin films by dropping toluene as an anti-solvent during the spin-coating with a perovskite precursor solution using 3,3-diphenylpropylamine bromide (DPPA-Br) as a ligand. The resulting films are uniform and composed of 5-20 nm FAPbBr(3) perovskite nanocrystals. By monitoring the solvent mixing of anti-solvent and precursor solution on the substrates, we illustrated the difference between the ligand-assisted reprecipitation (LARP) process and the nanocrystal-pinning (NCP) process. This understanding provides a guideline for film optimization, and the optimized films obtained through the in situ LARP process exhibit strong photoluminescence emission at 528 nm, with quantum yields up to 78% and an average photoluminescence lifetime of 12.7 ns. In addition, an exciton binding energy of 57.5 meV was derived from the temperature-dependent photoluminescence measurement. More importantly, we achieved highly efficient pure green perovskite based light-emitting diode (PeLEDs) devices with an average external quantum efficiency (EQE) of 7.3% (maximum EQE is 16.3%) and an average current efficiency (CE) of 29.5 cd A(-1) (maximum CE is 66.3 cd A(-1)) by adapting a conventional device structure of ITO/PEDOT:PSS/TFB/perovskite film/TPBi/LiF/Al. It is expected that the in situ LARP process provides an effective methodology for the improvement of the performance of PeLEDs.
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