期刊
ACS NANO
卷 8, 期 6, 页码 6491-6499出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn5015177
关键词
bilayer graphene; Cu enclosure; growth mechanism; carbon diffusion
类别
资金
- National Science Foundation [NSF DMR 0845358]
- Graphene Approaches to Terahertz Electronics (GATE) Multidisciplinary University Research Initiative (MURI) of Massachusetts Institute of Technology (MIT)-Harvard University-Boston University through the Office of Naval Research (ONR)
- Army Research Labs (ARL)
- [ONR-MURI-N00014-09-1-1063]
In this work, we investigated the growth mechanisms of bilayer graphene on the outside surface of Cu enclosures at low pressures. We observed that the asymmetric growth environment of a Cu enclosure can yield a much higher (up to 100%) bilayer coverage on the outside surface as compared to the bilayer growth on a flat Cu foil, where both sides are exposed to the same growth environment. By simultaneously examining the graphene films grown on both the outside and inside surfaces of the Cu enclosure, we find that carbon can diffuse from the inside surface to the outside via exposed copper regions on the inside surface. The kinetics of this process are examined by coupling the asymmetric growth between the two surfaces through a carbon diffusion model. Finally, using these results, we show that the coverage of bilayer graphene can be tuned simply by changing the thickness of the Cu foil, further confirming our model of carbon delivery through the Cu foil.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据