期刊
ACS NANO
卷 8, 期 8, 页码 7771-7779出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn503152r
关键词
MoS2; FET; contact resistance; two-dimensional materials; transfer length
类别
资金
- MOST [2012CB932702, 2010CB934203]
- NSF of China [11374022, 61321001]
Contact resistance hinders the high performance of electrical devices, especially devices based on two-dimensional (2D) materials, such as graphene and transition metal dichalcogenide. To engineer contact resistance, understanding the resistance distribution and carrier transport behavior at the contact area is essential Here, we developed a method that can be used to obtain some key parameters of contact, such as transfer length (L-t), sheet resistance of the 2D materials beneath the contacting metal (R-sh), and contact resistivity between the 2D materials and the metal electrode (rho(c)). Using our method, we studied the contacts between molybdenum disulfide (MoS2) and metals, such as titanium and gold, in bilayer and few-layered MoS2 devices. Especially, we found that R-sh is obviously larger than the sheet resistance of the same 2D materials in the channel (R-ch) in all the devices we studied. With the increasing of the back-gate voltage, L-t increases and R-sh, rho(c), R-ch, and the contact resistance R-c, decrease in all the devices we studied. Our results are helpful for understanding the metal-MoS2 contact and improving the performances of MoS2 devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据