4.8 Article

The Surface Optical Phonon in CdSe Nanocrystals

期刊

ACS NANO
卷 8, 期 4, 页码 3928-3938

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nn5008513

关键词

surface optical phonon; electron-phonon coupling; empirical force field; cadmium selenide; nanocrystal; quantum dot

资金

  1. NSF [CHE-1112192]
  2. Direct For Mathematical & Physical Scien [1112192] Funding Source: National Science Foundation
  3. Division Of Chemistry [1112192] Funding Source: National Science Foundation

向作者/读者索取更多资源

The origin of the ubiquitous low-frequency shoulder on the longitudinal optical (LO) phonon fundamental in the Raman spectra of CdSe quantum dots is examined. This feature is usually assigned as a surface optical (SO) phonon, but it is only slightly affected by modifying the surface through exchanging ligands or adding a semiconductor shell. Here we present excitation profile data showing that the low-frequency shoulder loses intensity as the excitation is tuned to longer wavelengths, closer to resonance with the lowest-energy 1S(e)-1S(3/2) excitonic transition. Calculations of the resonance Raman spectra are carried out using a fully atomistic model with an empirical force field to calculate the phonon modes and the standard effective mass approximation envelope function model to calculate the electron and hole wave functions. When a force field of the Tersoff type is used, the calculated spectra closely resemble the experimental ones in showing mainly the higher-frequency LO phonon with 1S(e)-1S(3/2) resonance but showing intensity in lower-frequency features with 1P(e)-1P(3/2) resonance. These calculations Indicate that the main LO phonon peak involves largely motion of the interior atoms, while the low-frequency shoulder is more equally distributed throughout the crystal but not surface-localized. Interestingly, very different results are obtained with the widely used Coulomb plus Lennard-Jones force field developed by Rabanl, which predicts far more disordered structures and more localized phonon modes for the nanocrystals compared with the Tersoff-type potential.

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