期刊
ACS NANO
卷 8, 期 1, 页码 752-760出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn4054039
关键词
gallium telluride; layered material; transistor; photodetector; responsivity
类别
资金
- MEXT of Japan [24651128, 24684023]
- AIMR fusion research project
- Grants-in-Aid for Scientific Research [24684023, 24651128, 23510147, 25610084] Funding Source: KAKEN
Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric and optoelectronic properties of nano GaTe flakes as layered materials are described in this article. The transistor fabricated from multilayer Gale shows a p-type action with a hole mobility of about 0.2 cm(2) V-1 s(-1). The gate transistor exhibits a high photoresponsivity of 10(4) A/W, which is greatly better than that of graphene, MoS2, and other layered compounds. Meanwhile, the response speed of 6 ms is also very fast. Both the high photoresponsivity and the fast response time described in the present study strongly suggest that multilayer Gale is a promising candidate for future optoelectronic and photosensitive device applications.
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