4.8 Article

Dye-Sensitized MoS2 Photodetector with Enhanced Spectral Photoresponse

期刊

ACS NANO
卷 8, 期 8, 页码 8285-8291

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nn502715h

关键词

MOS2; photodetector; organic dye; broad spectral photoresponse; photoresponsivity

资金

  1. Center for Advanced Soft-Electronics - Ministry of Science, ICT and Future Planning as Global Frontier Project [2013M3A6A5073177, 2011-0031630]
  2. Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) of the National Research Foundation of Korea (NRF) - MOSIP [2013M3A6B1078873]
  3. Basic Science Research Program of the National Research Foundation of Korea (NRF) - Ministry of Education, Science, and Technology, Korea [2009-0083540]
  4. National Research Foundation of Korea [10Z20130011056, 2013M3A6A5073177, 2012R1A1A2020089, 2013M3A6B1078873, 2011-0031630] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

We fabricated dye sensitized MoS2 photodetectors that utilized a single layer MoS2 treated with rhodamine 6G (R6G) organic dye molecules (with an optical band gap of 238 eV or 521 nm). The proposed photodetector showed an enhanced performance with a broad spectral photoresponse and a high photoresponsivity compared with the properties of the pristine MoS2 photodetectors. The R6G dye molecules deposited onto the MoS2 layer increased the photocurrent by an order of magnitude due to charge transfer of the photoexcited electrons from the R6G molecules to the MoS2 layer. Importantly, the photodetection response extended to the infrared (lambda < 980 nm, which corresponded to about half the energy band gap of MOS2), thereby distinguishing the device performance from that of a pristine MoS2 device, in which detection was only possible at wavelengths shorter than the band gap of MoS2, i.e., lambda < 681 nm. The resulting device exhibited a maximum photoresponsivity of 1.17 AW(-1), a photodetectivity of 15 x 10(7) Jones, and a total effective quantum efficiency (EQE) of 280% at 520 nm. The device design described here presents a significant step toward high-performance 2D nanomaterial-based photodetector.

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