期刊
ACS NANO
卷 8, 期 8, 页码 7938-7947出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn502719y
关键词
silicon carbide; nanoparticles; single photon emission; quantum characterization; intrinsic defects in silicon carbide
类别
资金
- Australian Research Council, Centre of Excellence Engineered Quantum Systems [CE110001013]
- Australian research council [DE130100592]
- Hungarian Academy of Sciences
- Hungarian OTKA [K101819, K106114]
- European Union
- State of Hungary
- European Social Fund [TAMOP-4.2.4.A/2-11/1-2012-0001]
The photoluminescence (PL) arising from silicon carbide nanoparticles has so far been associated with the quantum confinement effect or to radiative transitions between electronically active surface states. In this work we show that cubic phase silicon carbide nanoparticles with diameters in the range 45-500 nm can host other point defects responsible for photoinduced intrabandgap PL We demonstrate that these nanoparticles exhibit single photon emission at room temperature with record saturation count rates of 7 x 10(6) counts/s. The realization of nonclassical emission from SiC nanoparticles extends their potential use from fluorescence biomarker beads to optically active quantum elements for next generation quantum sensing and nanophotonics. The single photon emission is related to single isolated SiC defects that give rise to states within the bandgap.
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