Lateral MoS2 p-n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics

This paper demonstrates a technique to form a lateral homogeneous 2D MoS2 p-n junction by partially stacking 2D h-BN as a mask to p-dope MoS2. The fabricated lateral MoS2 p-n junction with asymmetric electrodes of Pd and Cr/Au displayed a highly efficient photoresponse (maximum external quantum efficiency of similar to 7000%, specific detectivity of 5 x 10(10) Jones, and light switching ratio of similar to 10(3)) and ideal rectifying behavior. The enhanced photoresponse and generation of open-circuit voltage (V-oc) and short-circuit current (I-sc) were understood to originate from the formation of a p-n junction after chemical doping. Due to the high photoresponse at low VD and VG attributed to its built-in potential, our MoS2 p-n diode made progress toward the realization of low-power operating photodevices. Thus, this study suggests an effective way to form a lateral p-n junction by the h-BN hard masking technique and to improve the photoresponse of MoS2 by the chemical doping process.