期刊
ACS NANO
卷 8, 期 5, 页码 4672-4677出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn5004327
关键词
molybdenum disulfide; molybdenum diselenide; transition metal dichalcogenides; CVD; sputtering; bandgap engineering; atomically thin films
类别
资金
- C-SPIN
- STARnet phase of the Focus Center Research Program (FCRP)
- MARCO
- DARPA
- U.S. National Science Foundation [DMR-1106210, DMR-1106172]
- U.S. Department of Energy (UCR, UCF, Columbia University) [DE-FG02-07ER15842]
- NERSC [DE-AC02-05CH11231]
- Extreme Science and Engineering Discovery Environment [TG-DMR130009]
- NSF [DGE-1326120]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1106172] Funding Source: National Science Foundation
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1106210] Funding Source: National Science Foundation
We demonstrate bandgap tuning of a single-layer MoS2 film on SiO2/Si via substitution of its sulfur atoms by selenium through a process of gentle sputtering, exposure to a selenium precursor, and annealing. We characterize the substitution process both for S/S and S/Se replacement Photoluminescence and, in the latter case, X-ray photoelectron spectroscopy provide direct evidence of optical band gap shift and selenium incorporation, respectively. We discuss our experimental observations, including the limit of the achievable bandgap shift, in terms of the role of stress in the film as elucidated by computational studies, based on density functional theory. The resultant films are stable in vacuum, but deteriorate under optical excitation In air.
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