4.8 Article

Core-Shell Heterojunction of Silicon Nanowire Arrays and Carbon Quantum Dots for Photovoltaic Devices and Self-Driven Photodetectors

期刊

ACS NANO
卷 8, 期 4, 页码 4015-4022

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nn501001j

关键词

silicon nanowire array; carbon quantum dots; surface passivation; relative balance; barrier height

资金

  1. National Key Basic Research Program of China [2012CB932400, 2013CB933500, 2010CB934700, 2013CB933900, 2014CB931800]
  2. National Natural Science Foundation of China [51272062, 51172151, 21101051, 91022032, 91227103]
  3. Chinese Academy of Sciences [KJZD-EW-M01-1]
  4. Fundamental Research Funds for the Central Universities [2012HGCX0003, 2013HGCH0012]
  5. Major Research Plan of the National Natural Science Foundation of China [91027021]

向作者/读者索取更多资源

Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at +/- 0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It Is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.

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