期刊
ACS NANO
卷 8, 期 7, 页码 6556-6562出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn501683f
关键词
Si nanosheets; 2D growth; thickness-dependent photoluminescence; tunable emission
类别
资金
- NRF-Global Ph.D. Fellowship Program from the National Research Foundation (NRF) of Korea - Ministry of Education, Science, and Technology (MEST), Korea
- Institute for Basic Science (IBS), Korea [CA1309]
- [2012R1A2A1A03010558]
Since the discovery of graphene, growth of two-dimensional (2D) nanomaterials has greatly attracted attention. However, spontaneous growth of atomic two-dimensional (2D) materials is limitedly permitted for several layered-structure crystals, such as graphene, MoS2, and h-BN, and otherwise it is notoriously difficult. Here we report the gas-phase 2D growth of silicon (Si), that is cubic in symmetry, via dendritic growth and an interdendritic filling mechanism and to form Si nanosheets (SiNSs) of 1 to 13 nm in thickness. Thin SiNSs show strong thickness-dependent photoluminescence in visible range including red, green, and blue (RGB) emissions with the associated band gap energies ranging from 1.6 to 3.2 eV; these emission energies were greater than those from Si quantum dots (SiQDs) of the similar sizes. We also demonstrated that electrically driven white, as well as blue, emission in a conventional organic light-emitting diode (OLED) geometry with the SiNS assembly as the active emitting layers. Tunable light emissions in visible range in our observations suggest practical implications for novel 2D Si nanophotonics.
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