期刊
ACS NANO
卷 8, 期 8, 页码 8208-8216出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn502510u
关键词
quantum dot; surface plasmon; heterojunction; exciton
类别
资金
- National Science Foundation of China [61205036]
- Shun Hing Institute of Advanced Engineering [8115041]
- Chinese University of Hong Kong [4055012]
- Applied Research Grant of City University of Hong Kong [9667067]
- Research Grants Council of the Hong Kong S.A.R., China [CityU 102412, CUHK401511]
The near-field effects of noble metal nanoparticles can be utilized to enhance the performance of inorganic/organic photosensing devices, such as solar cells and photodetectors. In this work, we developed a well-controlled fabrication strategy to incorporate Au nanostructures into HgTe quantum dot (QD)/ZnO heterojunction photodiode photodetectors. Through an electrostatic immobilization and dry transfer protocol, a layer of Au nanorods with uniform distribution and controllable density is embedded at different depths in the ZnO layer for systematic comparison. More than 80 and 240% increments of average short-circuit current density (J(sc)) are observed in the devices with Au nanorods covered by similar to 7.5 and similar to 4.5 nm ZnO layers, respectively. A periodic finite-difference time-domain (FDTD) simulation model is developed to analyze the depth-dependent property and confirm the mechanism of plasmon-enhanced light absorption in the QD layer. The wavelength dependent external quantum efficiency spectra suggest that the exciton dissociation and charge extraction efficiencies are also enhanced by the Au nanorods, likely due to local electric field effects. The photodetection performance of the photodiodes is characterized, and the results show that the plasmonic structure improves the overall infrared detectivity of the HgTe QD photodetectors without affecting their temporal response. Our fabrication strategy and theoretical and experimental findings provide useful insight into the applications of metal nanostructures to enhance the performance of organic/inorganic hybrid optoelectronic devices.
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