期刊
ACS NANO
卷 8, 期 12, 页码 12806-12813出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn506041t
关键词
graphene; single crystal; large size; defect free; chemical vapor deposition
类别
资金
- National Science Foundation of China [51325205, 51290273, 51221264, 51172240, 51102241]
- Ministry of Science and Technology of China [2012AA030303]
- Chinese Academy of Sciences [KGZD-EW-303-1]
Reducing nucleation density and healing structural defects are two challenges for fabricating large-area high-quality single-crystal graphene, which is essential for its electronic and optoelectronic applications. We have developed a method involving chemical vapor deposition (CVD) growth followed by repeated etchingregrowth, to solve both problems at once. Using this method, we can obtain single-crystal graphene domains with a size much larger than that allowed by the nucleation density in the initial growth and efficiently heal structural defects similar to graphitization but at a much lower temperature, both of which are impossible to realize by conventional CVD. Using this method with Pt as a growth substrate, we have grown similar to 3 mm defect-free single-crystal graphene domains with a carrier mobility up to 13 000 cm(2) V-1 s(-1) under ambient conditions.
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