期刊
ACS NANO
卷 8, 期 6, 页码 6265-6272出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn501728w
关键词
TMDs; MoS2; WSe2; band bending; X-ray photoelectron spectroscopy; hole contacts
类别
资金
- Center for Low Energy Systems Technology (LEAST)
- STARnet
- MARCO
- DARPA
MoOx shows promising potential as an efficient hole injection layer for p-FETs based on transition metal dichalcogenides. A combination of experiment and theory is used to study the surface and interfacial chemistry, as well as the band alignments for MoOx/MoS2 and MoOx/WSe2 heterostructures, using photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory. A Mo5+ rich interface region is identified and is proposed to explain the similar low hole Schottky barriers reported in a recent device study utilizing MoOx contacts on MoS2 and WSe2.
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