期刊
ACS NANO
卷 8, 期 4, 页码 3781-3787出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn500494a
关键词
subthreshold swing; silicon nanowires; feedback loop; field-effect transistor; plastic substrate
类别
资金
- Midcareer Researcher Program through the National Research Foundation of Korea (NRF) [NRF-2013R1A2A1A03070750]
- Ministry of Education, Science and Technology
- KSSRC program
- National Research Foundation of Korea [2013R1A2A1A03070750, 21A20131612106] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this study, we demonstrate the abruptly steep-switching characteristics of a feedback field-effect transistor (FBFET) with a channel consisting of a p(+)-i-n(+) Si nanowire (NW) and charge spacers of discrete nanocrystals on a plastic substrate. The NW FBFET shows superior switching characteristics such as an on/off current ratio of similar to 10(5) and an average subthreshold swing (SS) of 30.2 mV/dec at room temperature. Moreover, the average SS and threshold voltage values can be adjusted by programming. These sharp switching characteristics originate from a positive feedback loop generated by potential barriers in the intrinsic channel area. This paper describes in detail the switching mechanism of our device.
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