期刊
ACS NANO
卷 9, 期 1, 页码 612-619出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn5059419
关键词
charge-trap memory; MoS2; memory window; dual gate; memory characteristics
类别
资金
- National Young 1000 Talent Plan
- Pujiang Talent Plan in Shanghai
- National Natural Science Foundation of China [61322407, 11474058]
- Chinese National Science Fund for Talent Training in Basic Science [J1103204]
Charge-trap memory with high-kappa dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials like graphene and MoS2 have been receiving much attention because of their fantastic physical properties and potential applications in electronic devices. Here, we report on a dual-gate charge-trap memory device composed of a few-layer MoS2 channel and a three-dimensional (3D) Al2O3/HfO2/Al2O3 charge-trap gate stack. Because of the extraordinary trapping ability of both electrons and holes in HfO2, the MoS2 memory device exhibits an unprecedented memory window exceeding 20 V. Importantly, with a back gate the window size can be effectively tuned from 15.6 to 21 V; the program/erase current ratio can reach up to 10(4), allowing for multibit information storage. Moreover, the device shows a high endurance of hundreds of cycles and a stable retention of similar to 28% charge loss after 10 years, which is drastically lower than ever reported MoS2 flash memory. The combination of 2D materials with traditional high-kappa charge-trap gate stacks opens up an exciting field of nonvolatile memory devices.
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