期刊
ACS NANO
卷 8, 期 3, 页码 2774-2781出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn4064924
关键词
molybdenum disulfide (MoS2); field effect transistors; proton beam; electronic transport properties
类别
资金
- National Creative Research Laboratory program through the National Research Foundation of Korea (NRF) [2012026372]
- National Core Research Center program through the National Research Foundation of Korea (NRF) [2008-0062606]
- Korean Ministry of Science, ICT & Future Planning
- NRF grant [H-GUARD 2013M3A6B2078961]
We investigated the effect of irradiation on molybdenum disulfide (MoS2) field effect transistors with 10 MeV high-energy proton beams. The electrical characteristics of the devices were measured before and after proton irradiation with fluence conditions of 10(12), 10(13), and 10(14) cm(-2). For a low proton beam fluence condition of 10(12) cm(-2), the electrical properties of the devices were nearly unchanged in response to proton irradiation. In contrast, for proton beam fluence conditions of 10(13) or 10(14) cm(-2), the current level and conductance of the devices significantly decreased following proton irradiation. The electrical changes originated from proton-irradiation-induced traps, including positive oxide-charge traps in the 5i02 layer and trap states at the interface between the MoS2 channel and the SiO2 layer. Our study will enhance the understanding of the influence of high-energy particles on MoS2-based nanoelectronic devices.
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