4.8 Article

Growth of Wrinkle-Free Graphene on Texture-Controlled Platinum Films and Thermal-Assisted Transfer of Large-Scale Patterned Graphene

期刊

ACS NANO
卷 9, 期 1, 页码 679-686

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nn5060909

关键词

wrinkle-free graphene; patterned graphene; thermal-assisted transfer; chemical vapor deposition; texture-controlled platinum

资金

  1. National Research Foundation (NRF) - Korean government through the Bio and Medical Technology Development Program [NRF-2012M3A9C6049797]
  2. National Research Foundation (NRF) - Korean government through the Midcareer Researcher Program [NRF-2013R1A2A2A04015946]
  3. National Research Foundation (NRF) - Korean government through the Basic Science Research Program [2011-0014807]
  4. National Research Foundation (NRF) - Korean government through the National Nuclear RD program [2014M2B2A9031944]
  5. National Research Foundation of Korea [2014M2B2A9031944, 2011-0014807, 2012M3A9C6049797] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

Growth of large-scale patterned, wrinkle-free graphene and the gentle transfer technique without further damage are most important requirements for the practical use of graphene. Here we report the growth of wrinkle-free, strictly uniform monolayer graphene films by chemical vapor deposition on a platinum (Pt) substrate with texture-controlled giant grains and the thermal-assisted transfer of large-scale patterned graphene onto arbitrary substrates. The designed Pt surfaces with limited numbers of grain boundaries and improved surface perfectness as well as small thermal expansion coefficient difference to graphene provide a venue for uniform growth of monolayer graphene with wrinkle-free characteristic. The thermal-assisted transfer technique allows the complete transfer of large-scale patterned graphene films onto arbitrary substrates without any ripples, tears, or folds. The transferred graphene shows high crystalline quality with an average carrier mobility of similar to 5500 cm(2) V-1 s(-1) at room temperature. Furthermore, this transfer technique shows a high tolerance to variations in types and morphologies of underlying substrates.

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